Transistor characterization tool

The MOS extractor tool MET_1 is able to precisely extract the parameters of MOS transistor by using the latest version of physical equations of deep sub-micron on CMOS technology.

In semiconductor industry, MOS characterization is very needed to recognize the technology parameters of the transistor and to collect their values in a model file.  Our low cost tool MET_1 can do that.

When the technology of MOS transistor is moving towards down scale of the transistor, the number of parameters of the transistor is heavily increasing. BSIM-v3 that was released in December 1996 has about 160 parameters. BSIM-v3 was implemented for parameter extraction of sub micron MOS transistor. BSIM-v4 was released in April 2001 with about 600 parameters, and it was implemented to extract the parameters of sub 0.1 um MOS transistor.

MET_1 uses BSIM-v3 and -v4 as the engines. The user finds flexibility in choosing the BSIMs, then he manipulates the target parameter values to make the simulated curves fit to the measured curves. When the parameters are extracted, they are collected in a file known as technology model file. The IC designers use the technology model file to design and simulate digital and analog circuits. Our tool is developed to run on PC under Windows.
 

The two commercial existing characterization tools, UTMOST of Silvaco International and IC-CAP of Agilent Technologies, run on Unix. Their licenses are above US$ 10000.

Would you like to ask for a license of our software? kindly, please contact us.

Product description

A measurement routine accompanies MET_1 for measuring MOS transistor. We can adopt this measurement routine to different setups of different wafer probes, parameter analyzers, pulse generators and Switch matrixes. (1) (2)

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